Samsung DDR4 128GB 3200 CL26 ECC REG 3DS. M393AAG40M32-CAE. Includes a register for enhancing clock, command and control signals. Error correction available by added 8 bit parity signals. Supports x4 / x8 Organization / up to 2 ranks per DIMM and 2DPC configuration. Application - Server.
Samsung DDR5 256GB 4800 ECC REG 3DS M321RBGA0B40-CWK. Includes a register for enhancing clock, command and control signals. Error correction available by added 8 bit parity signals. Supports x4 / x8 Organization / up to 2 ranks per DIMM and 2DPC configuration. Application - Server.
Samsung DDR5 96GB 4800 ECC REG M321RYGA0BB0-CQK. Includes a register for enhancing clock, command and control signals. Error correction available by added 8 bit parity signals. Includes a register for enhancing clock, command and control signals. Error correction available by added 8 bit parity signals. Supports x4 / x8 Organization / up to 2 ranks per DIMM and 2DPC configuration. Application - Server.
Samsung DDR4 32GB 2666 CL19 ECC REG M393A4K40CB2-CTD. Includes a register for enhancing clock, command and control signals. Error correction available by added 8 bit parity signals. Supports x4 / x8 Organization / up to 2 ranks per DIMM and 2DPC configuration. Application - Server.
Samsung DDR4 32GB 3200 ECC REG M393A4K40EB3-CWE. Includes a register for enhancing clock, command and control signals. Error correction available by added 8 bit parity signals. Supports x4 / x8 Organization / up to 2 ranks per DIMM and 2DPC configuration. Application - Server.
Samsung DDR5 32GB 4800 ECC REG M321R4GA0BB0-CQK. Includes a register for enhancing clock, command and control signals. Error correction available by added 8 bit parity signals. Supports x4 / x8 Organization / up to 2 ranks per DIMM and 2DPC configuration. Application - Server.
Samsung DDR5 64GB 4800 ECC REG M321R8GA0BB0-CQK. Includes a register for enhancing clock, command and control signals. Error correction available by added 8 bit parity signals. Supports x4 / x8 Organization / up to 2 ranks per DIMM and 3DPC configuration. Application - Server.
Samsung DDR4 128G 3200 ECC REG LRDIMM M386AAG40AM3-CWE. Includes a register for enhancing clock, command and control signals. Enhanced data signal by placing data buffer. Best solution for achieving high density with high speed. Supports x4 Organization / up to 4 ranks per DIMM and 3DPC. Application - Server.
Samsung DDR4 32GB 3200 ECC REG M393A4G43AB3-CWE. Includes a register for enhancing clock, command and control signals. Error correction available by added 8 bit parity signals. Supports x4 / x8 Organization / up to 2 ranks per DIMM and 2DPC configuration. Application - Server.
Samsung DDR4 64GB 3200 ECC REG M393A8G40AB2-CWE. Includes a register for enhancing clock, command and control signals. Error correction available by added 8 bit parity signals. Supports x4 / x8 Organization / up to 2 ranks per DIMM and 2DPC configuration. Application - Server.
Samsung DDR4 8G 3200 CL21 UDIMM M378A1K43EB2-CWE. Unbuffered DIMM DDR5 | No buffer or register: smaller latency value | Supports x8/x16 Organization / up to 2 ranks per DIMM and 2DPC configuration | For Desktop
Corsair DDR4 8GB 3200 CL16 Vengence LPX CMK8GX4M1Z3200C16 memory is designed for high-performance overclocking. The heatspreader is made of pure aluminum for faster heat dissipation, and the eight-layer PCB helps manage heat and provides superior overclocking headroom.
DDR5 meets the demands of industries experiencing an enormous burst in data. A new level of speed, improved capacity, and bolstered reliability are packed into DDR5 to enhance overall system performance. Samsung's memory technology propels the next era of planet-friendly innovation with power-saving DDR5.
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